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MFG:ASI
Part Number: MSC1000M
MFG: ASI
Description: The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifi...
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MSC1000M
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DataSheet
General Description
MSC1000M General Description
The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications.
This device is capable of withstanding a :1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic
wire bonding techniques ensure high reliability and product consistency.
The MSC1000M is housed in the IMPAC™ package with internal input matching.
MSC1000M Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
PDISS |
Power Dissipation* (See Safe Area) |
-- |
W |
|
IC |
Device Current* |
300 |
mA |
|
VCE |
Collector-Emitter Bias Voltage* |
20 |
V |
|
TJ |
Junction Temperature (Pulsed RF Operation) |
200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
MSC1000M Features
`RUGGEDIZED VSWR:1
`INPUT MATCHING
`LOW THERMAL RESISTANCE
`CLASS A OPERATION
`POUT = 0.6 W MIN. WITH 10.8 dB GAIN
MSC1000M
PDF/DataSheet Download
- Datasheet: MSC1000M
- File Size: 102975 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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