MSC1000M

Features: `RUGGEDIZED VSWR:1 `INPUT MATCHING`LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = 0.6 W MIN. WITH 10.8 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (See Safe Area) -- W IC Device Current* 300 mA VCE Collector-Em...

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MSC1000M Picture
SeekIC No. : 004427805 Detail

MSC1000M: Features: `RUGGEDIZED VSWR:1 `INPUT MATCHING`LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = 0.6 W MIN. WITH 10.8 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power ...

floor Price/Ceiling Price

Part Number:
MSC1000M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

`RUGGEDIZED VSWR:1
`INPUT MATCHING
`LOW THERMAL RESISTANCE
`CLASS A OPERATION
`POUT = 0.6 W MIN. WITH 10.8 dB GAIN




Specifications

Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (See Safe Area)
--
W
IC
Device Current*
300
mA
VCE
Collector-Emitter Bias Voltage*
20
V
TJ
Junction Temperature (Pulsed RF Operation)
200
°C
TSTG
Storage Temperature
- 65 to +150
°C



Description

The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications.

MSC1000M is capable of withstanding a :1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic
wire bonding techniques ensure high reliability and product consistency.

The MSC1000M is housed in the IMPAC™ package with internal input matching.




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