MSC81058, MSC81111, MSC81118 Selling Leads, Datasheet
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MSC81058, MSC81111, MSC81118
- Table of contents:
Info of MSC81058
Info of MSC81111
Info of MSC81118
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About MSC81058
PDF/DataSheet Download
Datasheet: MSC81058
File Size: 104433 KB
Manufacturer: STMicro
Download : Click here to Download
About MSC81111
PDF/DataSheet Download
Datasheet: MSC81111
File Size: 103114 KB
Manufacturer: STMicro
Download : Click here to Download
About MSC81118
PDF/DataSheet Download
Datasheet: MSC81118
File Size: 105395 KB
Manufacturer: STMicro
Download : Click here to Download
MSC81058 General Description
The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions.
The MSC81058 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
MSC81058 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation* |
29 |
W |
| IC | Device Current* |
1.0 |
A |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC81058 Features
`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz
MSC81111 General Description
The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81111 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
MSC81111 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation*(TC 50°C) |
18.75 |
W |
| IC | Device Current* |
600 |
mA |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC81111 Features
`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz
MSC81118 General Description
The MSC81118 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
The MSC81118 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
MSC81118 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation*(TC 75°C) |
6.25 |
W |
| IC | Device Current* |
200 |
mA |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC81118 Features
`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz
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