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MSC8122VT8000, MSC81250M, MSC8126ADSE

Table of contents:
Info of MSC8122VT8000
Info of MSC81250M
Info of MSC8126ADSE

MSC8122VT8000, MSC81250M, MSC8126ADSE Selling Leads, Datasheet

MFG:Freescale Semiconductor Category:Programmers, Development Systems D/C:912

MSC8122VT8000, MSC81250M, MSC8126ADSE Picture

MSC8122VT8000, MSC81250M, MSC8126ADSE Datasheet download

Five Points

Part Number: MSC8122VT8000

Category: Programmers, Development Systems

MFG: Freescale Semiconductor

Package Cooled:

D/C: 912

Description: KIT ADVANCED DEV SYSTEM 8126

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MSC81250M General Description

The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency.

The MSC81250M is housed in the unique AMPAC™ package with internal input/output matching structures

MSC81250M Maximum Ratings

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation*(T_C 80°C)	600	W
I_C	Device Current*	17.6	A
V_CC	Collector-Supply Voltage^*	55	V
T_J	Junction Temperature (Pulsed RF Operation)	250
T_STG	Storage Temperature	65 to 200

MSC81250M Features

.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 20:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
·P_OUT = 250 W MIN. WITH 6.2 dB GAIN

MSC8126ADSE Parameters

Technical/Catalog Information	MSC8126ADSE
Vendor	Freescale Semiconductor
Category	Programmers, Development Systems
Type	*
Contents	*
For Use With/Related Products	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MSC8126ADSE MSC8126ADSE

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