MFG:Freescale Semiconductor Category:Integrated Circuits (ICs) D/C:912
MSC8126VT8000, MSC81325M, MSC81350M Datasheet download
Category: Integrated Circuits (ICs)
MFG: Freescale Semiconductor
Package Cooled:
D/C: 912
Description: IC DSP QUAD 16B 500MHZ 431FCPBGA
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PDF/DataSheet Download
Datasheet: MSC1000-029
File Size: 198202 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSC81325M
File Size: 75429 KB
Manufacturer: STMicro
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSC81350M
File Size: 77339 KB
Manufacturer: STMicro
Download : Click here to Download
| Technical/Catalog Information | MSC8126VT8000 |
| Vendor | Freescale Semiconductor |
| Category | Integrated Circuits (ICs) |
| Package / Case | 431-FCPBGA |
| Packaging | Tray |
| Type | Fixed Point |
| Non-Volatile Memory | ROM (4 kB) |
| On-Chip RAM | 1.436MB |
| Interface | DSI, Ethernet, RS-232 |
| Voltage - I/O | 3.30V |
| Voltage - Core | 1.20V |
| Clock Rate | 500MHz |
| Operating Temperature | 0°C ~ 90°C |
| Drawing Number | 375; 1550-03; ; 431 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MSC8126VT8000 MSC8126VT8000 |
The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.
The MSC81325M is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures.
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation*(TC 100°C) |
880 |
W |
| IC | Device Current* |
24 |
A |
| VCC | Collector-Supply Voltage* |
55 |
V |
| TJ | Junction Temperature (Pulsed RF Operation) |
250 |
|
| TSTG | Storage Temperature |
65 to 200 |
The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications.
This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency.
The MSC81350M is housed in the unique AMPAC™ package with internal input/output matching structures.
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation*(TC 55°C) |
720 |
W |
| IC | Device Current* |
19.8 |
A |
| VCC | Collector-Supply Voltage* |
55 |
V |
| TJ | Junction Temperature (Pulsed RF Operation) |
250 |
|
| TSTG | Storage Temperature |
65 to 200 |
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