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The MSC81400M "Super Power" transistor is a high peak pulse power device specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum 25:1 load mismatch condition at any phase angle under full rated conditions.
The MSC81400M is housed in the unique BIGPAC ™ hermetic metal/ceramic package with internal input/output matching structures.
MSC81400M Maximum Ratings
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*(TC 80°C)
1000
W
IC
Device Current*
28
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
TSTG
Storage Temperature
65 to 200
MSC81400M Features
.REFRACTORY\GOLD METALLIZATION .RUGGEDIZED VSWR 25:1 .INTERNAL INPUT/OUTPUT MATCHING .LOW THERMAL RESISTANCE .METAL/CERAMIC HERMETIC PACKAGE ·POUT = 400 W MIN. WITH 6.5 dB GAIN
MSC81402 General Description
The MSC81402 is a 28 Volt, Class C, common base NPN biploar device designed for general purpose amplifier applications in the UHF and L-Band frequency range.
High gain and collector efficiency along with extreme ruggedness are obtained using a gold metallized emitter-ballasted overlay die geometry.
MSC81402 Maximum Ratings
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*(TC 50°C)
6
W
IC
Device Current*
0.23
A
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
TSTG
Storage Temperature
65 to 200
MSC81402 Features
.REFRACTORY/GOLD METALLIZATION .HIGH GAIN & COLLECTOR EFFICIENCY .RUGGED OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE ·POUT = 2.0 W MIN. WITH 10.0 dB GAI
MSC8144ADS Parameters
Technical/Catalog Information
MSC8144ADS
Vendor
Freescale Semiconductor
Category
Programmers, Development Systems
Type
DSP
Contents
AMC Card, Power Supply, Cables, USB TAP, Hardware and Documentation