MSC82001, MSC82003, MSC82005 Selling Leads, Datasheet
MFG:ASI Package Cooled:N/A D/C:ST
MSC82001, MSC82003, MSC82005 Datasheet download
Part Number: MSC82001
MFG: ASI
Package Cooled: N/A
D/C: ST
MSC82001, MSC82003, MSC82005
- Table of contents:
Info of MSC82001
Info of MSC82003
Info of MSC82005
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About MSC82001
PDF/DataSheet Download
Datasheet: MSC82001
File Size: 95428 KB
Manufacturer: STMicro
Download : Click here to Download
About MSC82003
PDF/DataSheet Download
Datasheet: MSC82003
File Size: 94264 KB
Manufacturer: STMicro
Download : Click here to Download
About MSC82005
PDF/DataSheet Download
Datasheet: MSC82005
File Size: 86967 KB
Manufacturer: STMicro
Download : Click here to Download
MSC82001 General Description
The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82001 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range
MSC82001 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation* |
7.0 |
W |
| IC | Device Current* |
200 |
mA |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC82001 Features
`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
MSC82003 General Description
The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82003 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range.
MSC82003 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation* |
21.8 |
W |
| IC | Device Current* |
600 |
mA |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC82003 Features
`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
MSC82005 General Description
The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82005 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range.
MSC82005 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation* |
29 |
W |
| IC | Device Current* |
1.0 |
A |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC82005 Features
`EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
.REFRACTORY/GOLD METALLIZATION
`VSWR CAPABILITY :1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
`POUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
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