MSC82040, MSC82100, MSC82302 Selling Leads, Datasheet
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MSC82040, MSC82100, MSC82302
- Table of contents:
Info of MSC82040
Info of MSC82100
Info of MSC82302
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About MSC82040
PDF/DataSheet Download
Datasheet: MSC82040
File Size: 87678 KB
Manufacturer: STMicro
Download : Click here to Download
About MSC82100
PDF/DataSheet Download
Datasheet: MSC82100
File Size: 88377 KB
Manufacturer: STMicro
Download : Click here to Download
About MSC82302
PDF/DataSheet Download
Datasheet: MSC82302
File Size: 53851 KB
Manufacturer: STMicro
Download : Click here to Download
MSC82040 General Description
The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.
MSC82040 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation (see Safe Area) |
- |
W |
| IC | Device Bias Current |
200 |
mA |
| VCE | Collector-Emitter Bias Voltage* |
20 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC82040 Features
`EMITTER BALLASTED
.CLASS A LINEAR OPERATION
.COMMON EMITTER
`VSWR CAPABILITY :1 @ RATED CONDITIONS
.ft 1.6 GHz TYPICAL
.NOISE FIGURE 15.5 dB @ 2 GHz
`POUT = 27 dBm MIN. @ 1.0 GHz
.CLASS A LINEAR OPERATION
.COMMON EMITTER
`VSWR CAPABILITY :1 @ RATED CONDITIONS
.ft 1.6 GHz TYPICAL
.NOISE FIGURE 15.5 dB @ 2 GHz
`POUT = 27 dBm MIN. @ 1.0 GHz
MSC82100 General Description
The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.
MSC82100 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation (see Safe Area) |
- |
W |
| IC | Device Bias Current |
200 |
mA |
| VCE | Collector-Emitter Bias Voltage* |
20 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC82100 Features
`EMITTER BALLASTED
.CLASS A LINEAR OPERATION
.COMMON EMITTER
`VSWR CAPABILITY :1 @ RATED CONDITIONS
.ft 1.6 GHz TYPICAL
.NOISE FIGURE 15.5 dB @ 2 GHz
`POUT = 27 dBm MIN. @ 1.0 GHz
.CLASS A LINEAR OPERATION
.COMMON EMITTER
`VSWR CAPABILITY :1 @ RATED CONDITIONS
.ft 1.6 GHz TYPICAL
.NOISE FIGURE 15.5 dB @ 2 GHz
`POUT = 27 dBm MIN. @ 1.0 GHz
MSC82302 General Description
The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.
The MSC82302 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range.
MSC82302 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation*(TC 55°C) |
6.0 |
W |
| IC | Device Current* |
300 |
mA |
| VCC | Collector-Supply Voltage* |
26 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
MSC82302 Features
.REFRACTORY/GOLD METALLIZATION
·VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
·POUT = 1.8 W MIN. WITH 10.0 dB GAIN
·VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.HERMETIC STRIPAC® PACKAGE
·POUT = 1.8 W MIN. WITH 10.0 dB GAIN
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