MSC8258-04, MSC83301, MSC83303 Selling Leads, Datasheet
MFG:RF Package Cooled:N/A D/C:ST
MSC8258-04, MSC83301, MSC83303 Datasheet download
Part Number: MSC8258-04
MFG: RF
Package Cooled: N/A
D/C: ST
MSC8258-04, MSC83301, MSC83303
- Table of contents:
Info of MSC8258-04
Info of MSC83301
Info of MSC83303
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About MSC1000-029
PDF/DataSheet Download
Datasheet: MSC1000-029
File Size: 198202 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About MSC83301
PDF/DataSheet Download
Datasheet: MSC83301
File Size: 98519 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About MSC83303
PDF/DataSheet Download
Datasheet: MSC83303
File Size: 95581 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
MSC83301 General Description
The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83301 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.
MSC83301 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
PDISS |
Power Dissipation* (TC 50°C) |
6.0 |
W |
|
IC |
Device Current* |
200 |
mA |
|
VCC |
Collector-Supply Voltage* |
30 |
V |
|
TJ |
Junction Temperature |
200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +200 |
°C |
MSC83303 General Description
The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.
MSC83303 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
PDISS |
Power Dissipation* (TC 50°C) |
10.0 |
W |
|
IC |
Device Current* |
540 |
mA |
|
VCC |
Collector-Supply Voltage* |
30 |
V |
|
TJ |
Junction Temperature |
200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +200 |
°C |
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