MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92 D/C:N/A
NDF0601, NDF0610, NDF06N60ZG Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-92
D/C: N/A
Description: MOSFET P-CH -60V 10 OHM TO92
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PDF/DataSheet Download
Datasheet: NDF0610
File Size: 566566 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDF0610
File Size: 566566 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDF0610
File Size: 566566 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDF0610 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 180mA |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 500mA,10V |
| Input Capacitance (Ciss) @ Vds | 60pF @ 25V |
| Power - Max | 800mW |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 1.43nC @ 10V |
| Package / Case | TO-92 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDF0610 NDF0610 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
|
Symbol |
Parameter |
NDC632P |
Units | |
|
VDSS VDGR |
Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) |
-60 -60 ±20 ±30 |
V V V V A W mW/°C °C °C | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) | |||
|
ID |
Drain Current Continuous Pulsed |
-0.18 |
-0.12 | |
|
PD |
Maximum Power Dissipation TA = 25°C Derate above 25°C |
-1 | ||
| TJ,TSTG | Operating and Storage Temperature Range |
0.8 5 |
0.36 2.9 | |
| TL | Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds |
-55 to 150 300 | ||
| RJA | Thermal Resistance, Junction-to-Ambient | 200 |
350 |
°C/W |
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