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NDN2916B, NDP4050, NDP4050L

NDN2916B, NDP4050, NDP4050L Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:09+  D/C:09+

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NDN2916B, NDP4050, NDP4050L Datasheet download

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Part Number: NDP4050

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 09+

D/C: 09+

Description: MOSFET N-CH 50V 15A TO-220

 

 
 
 
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  • NDP4060L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-03-28
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
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Datasheet: NDP4050

File Size: 68582 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • NDP4060L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-03-28
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

About NDP4050L

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Datasheet: NDP4050L

File Size: 69858 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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NDP4050 Parameters

Technical/Catalog InformationNDP4050
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDP4050
NDP4050

NDP4050 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP4050 Maximum Ratings

Symbol
Parameter
NDP4050
NDB4050
Units
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MW)
50
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP 50 µs)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
± 15
A
± 45
PD
Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDP4050 Features

`15A, 50V. RDS(ON) = 0.10 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDP4050L Parameters

Technical/Catalog InformationNDP4050L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDP4050L
NDP4050L

NDP4050L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP4050L Maximum Ratings

Symbol
Parameter
NDP4050L
NDB4050L
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS 1 M)
50
V
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 16
V
± 25
ID Drain Current - Continuous
- Pulsed
15
A
45
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
W
0.33
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275

NDP4050L Features

·15A, 50V. RDS(ON) = 0.1W @ VGS = 5V
·Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

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