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NDT454P, NDT455, NDT455N

Table of contents:
Info of NDT454P
Info of NDT455
Info of NDT455N

NDT454P, NDT455, NDT455N Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT223 D/C:06+

NDT454P, NDT455, NDT455N Datasheet download

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Part Number: NDT454P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOT223

D/C: 06+

Description: MOSFET N-CH 30V 11.5A SOT-223

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NDT454P Parameters

Technical/Catalog Information	NDT454P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.9A
Rds On (Max) @ Id, Vgs	50 mOhm @ 5.9A, 10V
Input Capacitance (Ciss) @ Vds	950pF @ 15V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDT454P NDT454P

NDT454P General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDT454P Maximum Ratings

Symbol	Parameter	NDT454P	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage - Continuous	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	±5.9	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	±15	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W
* Order option J23Z for cropped center drain lead.

NDT454P Features

`-5.9A, -30V. R_DS(ON) = 0.05 @ V_GS = -10V
R_DS(ON) = 0.07 @ V_GS = -6V
R_DS(ON) = 0.09 @ V_GS= -4.5V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT454P Connection Diagram

NDT455N Parameters

Technical/Catalog Information	NDT455N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11.5A
Rds On (Max) @ Id, Vgs	15 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds	1220pF @ 15V
Power - Max	1.1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	61nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDT455N NDT455N NDT455NDKR ND NDT455NDKRND NDT455NDKR

NDT455N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

NDT455N Maximum Ratings

Symbol	Parameter	NDT455N	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage - Continuous	20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	± 11.5	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	± 40	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W

NDT455N Features

`11.5 A, 30 V. R_DS(ON) = 0.015 @ V_GS = 10 V
R_DS(ON) = 0.02 @ V_GS= 4.5 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT455N Connection Diagram

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