NES1823P-50, NES1823S-90, NES2123B-50 Selling Leads, Datasheet
MFG:NEC D/C:09+
NES1823P-50, NES1823S-90, NES2123B-50 Datasheet download
Part Number: NES1823P-50
MFG: NEC
Package Cooled:
D/C: 09+
NES1823P-50, NES1823S-90, NES2123B-50
- Table of contents:
Info of NES1823P-50
Info of NES1823S-90
Info of NES2123B-50
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About NES1823P-50
PDF/DataSheet Download
Datasheet: NES1823P-50
File Size: 45372 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NES120
PDF/DataSheet Download
Datasheet: NES120
File Size: 690718 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
About NES120
PDF/DataSheet Download
Datasheet: NES120
File Size: 690718 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
NES1823P-50 General Description
The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
NES1823P-50 Maximum Ratings
|
Parameter |
Symbol |
Ratings |
Unit |
| Drain to Source Voltage |
VDS |
15 |
V |
| Gate to Source Voltage |
VGSO |
-7 |
V |
| Gate to Drain Voltage |
VGDO |
-18 |
V |
| Drain Current |
ID |
30 |
A |
| Gate Current |
IG |
200 |
mA |
| Total Power Dissipation |
PtotNote |
110 |
W |
| Channel Temperature |
Tch |
175 |
°C |
| Storage Temperature |
Tstg |
-65 to +175 |
°C |
NES1823P-50 Features
• Push-pull type N-channel GaAs MES FET
• High output power: Pout = 50 W TYP.
• High linear gain: GL = 10.5 dB TYP.
• High power added efficiency: hadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz
• High output power: Pout = 50 W TYP.
• High linear gain: GL = 10.5 dB TYP.
• High power added efficiency: hadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz
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