NES1821B-30 Selling Leads, Price trend, NES1821B-30 DataSheet download, circuit diagram from SeekIC.com

Features: · High output power· High gain· High power added efficiency· Internally matched input· High reliabilitySpecificationsDrain to Source Voltage. VDS 15 VGate to Source Voltage ..VGS 7 VGate to Drain Voltage ...VGD18 VDrain Current ......... ID 27 AGate Current......... IG 180 mATotal Power ...

See larger image

SeekIC No. : 004433528 Detail

NES1821B-30: Features: · High output power· High gain· High power added efficiency· Internally matched input· High reliabilitySpecificationsDrain to Source Voltage. VDS 15 VGate to Source Voltage ..VGS 7 VGate t...

NES1821B-30 Data Sheet

Get Latest Price

Part Number:: NES1821B-30
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

NES120 evaluate
Features: · DIN rail standard mounting: EN50022-3527.5 or 35215· Universal input: 85 ~ 265VAC cont...
NES1823P-50 evaluate
Features: • Push-pull type N-channel GaAs MES FET• High output power: Pout = 50 W TYP....
NES1823P-45 evaluate
Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High ...

Product Details

Description

Features:

· High output power
· High gain
· High power added efficiency
· Internally matched input
· High reliability

Specifications

Drain to Source Voltage. V_DS              15                 V
Gate to Source Voltage ..V_GS             7                 V
Gate to Drain Voltage ...V_GD            18                V
Drain Current ......... I_D            27                 A
Gate Current......... I_G              180               mA
Total Power Dissipation .P_T(*)             110                W
Channel Temperature ..   T_ch             175                °C
Storage Temperature .. T_stg    65 to +175          °C

Description

The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The NES1821B-30 has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology.

The NES1821B-30 incorporates WSi (tungsten silicide) gate or high reliability and SiO2 glassivation for urface stability.

Customers Who Bought This Item Also Bought

NES1823P-150
US $$2.30 - 2.50 / Piece

Supply Ability:8000Day

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

NES1821B-30

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Cables, Wires(3584)

Test Equipment(3237)

Transformers(1503)

Power Supplies - External/Internal (Off-Board)(631)

Sensors, Transducers(2877)

Capacitors(4587)