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NID3055L-094G, NID5001N, NID5003N

NID3055L-094G, NID5001N, NID5003N Selling Leads, Datasheet

MFG:ON  Package Cooled:TO-252  D/C:09+

NID3055L-094G, NID5001N, NID5003N Picture

NID3055L-094G, NID5001N, NID5003N Datasheet download

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Part Number: NID3055L-094G

 

MFG: ON

Package Cooled: TO-252

D/C: 09+

 

 

 
 
 
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About NID5001N

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Datasheet: NID5001N

File Size: 54925 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NID5001N

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Datasheet: NID5001N

File Size: 54925 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NID5003N

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Datasheet: NID5003N

File Size: 51460 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NID5001N General Description

HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor's latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.

NID5001N Maximum Ratings

Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc
Drain−to−Gate Voltage Internally Clamped (RGS = 1.0M ) VDGR 42 Vdc
Gate−to−Source Voltage VGS ±14 Vdc
Drain Current Continuous ID Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD 64
1.0
1.56
W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RJC
RJA
RJA
1.95
120
80
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 3.2 Apk, L = 120 mH, RG = 25)
EAS 1215 mJ
Operating and Storage Temperature Range (Note 3) TJ, Tstg −55 to 150 °C

NID5001N Features

• Low RDS(on)
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection

NID5001N Connection Diagram

NID5003N General Description

HDPlurTM devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.

NID5003N Maximum Ratings

Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc
Gate−to−Source Voltage VGS ±14 Vdc
Drain Current Continuous ID Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD 1.3
2.3
W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RJC
RJA
RJA
3.0
95
54
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 3.2 Apk, L = 120 mH, RG = 25)
EAS 600 mJ
Operating and Storage Temperature Range (Note 3) TJ, Tstg −55 to 150 °C

NID5003N Features

• Short Circuit Protection/Current Limit
• Thermal Shutdown with Automatic Restart
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection

NID5003N Connection Diagram

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