MOSFET 52V 9A N-Channel
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 59 V | ||
| Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 9 A | ||
| Resistance Drain-Source RDS (on) : | 181 mOhms at 4 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |

| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage Internally Clamped | VDSS | 52−59 | V |
| Gate−to−Source Voltage − Continuous | VGS | ±15 | V |
| Drain Current − Continuous @ TA = 25 Drain Current − Single Pulse (tp = 10s) |
ID IDM |
9.0 35 |
A |
| Total Power Dissipation @ TA = 25 | PD | 28.8 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 |
|
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 125 (VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V, RG = 25) |
EAS | 160 | mJ |
| Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
5.2 72 100 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from Case for 10 s |
TL | 260 |
| Technical/Catalog Information | NID9N05CL |
| Vendor | ON Semiconductor |
| Category | Integrated Circuits (ICs) |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 153 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 9A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -55°C ~ 175°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NID9N05CL NID9N05CL |