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NTB22N06L, NTB22N06T4, NTB23N03R

NTB22N06L, NTB22N06T4, NTB23N03R Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:06+  D/C:07+

NTB22N06L, NTB22N06T4, NTB23N03R Picture

NTB22N06L, NTB22N06T4, NTB23N03R Datasheet download

Five Points

Part Number: NTB22N06L

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: 06+

D/C: 07+

Description: MOSFET N-CH 25V 23A D2PAK

 

 
 
 
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About NTB22N06L

PDF/DataSheet Download

Datasheet: NTB22N06L

File Size: 73728 KB

Manufacturer: ON SEMICONDUCTOR

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About NTB10N40

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Datasheet: NTB10N40

File Size: 72740 KB

Manufacturer: ON SEMICONDUCTOR

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About NTB23N03R

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Datasheet: NTB23N03R

File Size: 65309 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NTB22N06L General Description

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

NTB22N06L Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 10 M )
VDGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp10 ms)
VGS
VGS
±10
±20
Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tp10 ms)
I D
ID
IDM
22
10
66
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
60
0.4
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
I L(pk) = 12 A, VDS = 60 Vdc, RG = 25 )
EAS
72
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RJC
RJA
2.5
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
°C

NTB22N06L Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

NTB22N06T4 Parameters

Technical/Catalog InformationNTB22N06T4
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs60 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max60W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (3 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB22N06T4
NTB22N06T4
NTB22N06T4OS ND
NTB22N06T4OSND
NTB22N06T4OS

NTB23N03R Parameters

Technical/Catalog InformationNTB23N03R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs45 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 225pF @ 20V
Power - Max37.5W
PackagingTube
Gate Charge (Qg) @ Vgs3.76nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB23N03R
NTB23N03R

NTB23N03R General Description

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

NTB23N03R Maximum Ratings

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 25 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Drain Current
− Continuous @ TA = 25°C, Limited by Chip
− Continuous @ TA = 25°C, Limited by Package
− Single Pulse (tp = 10 s)
ID
ID
IDM
23
6.0
60
A
Total Power Dissipation @ TA = 25°C PD 37.5 W
Operating and Storage Temperature Range TJ, Tstg −55 to
150
°C
Thermal Resistance − Junction−to−Case RJC 3.3 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
TL 260 °C

NTB23N03R Features

• Pb−Free Packages are Available

NTB23N03R Typical Application

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters

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