NTB23N03R

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 45 mOhms


Features:

• Pb−Free Packages are Available


Application

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters


Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	25	Vdc
Gate−to−Source Voltage − Continuous	VGS	±20	Vdc
Drain Current − Continuous @ TA = 25°C, Limited by Chip − Continuous @ TA = 25°C, Limited by Package − Single Pulse (tp = 10 s)	ID ID IDM	23 6.0 60	A
Total Power Dissipation @ TA = 25°C	PD	37.5	W
Operating and Storage Temperature Range	TJ, Tstg	−55 to 150	°C
Thermal Resistance − Junction−to−Case	RJC	3.3	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds	TL	260	°C

Description

NTB23N03R is Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.


Parameters:

Technical/Catalog Information	NTB23N03R
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	45 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	225pF @ 20V
Power - Max	37.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	3.76nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTB23N03R NTB23N03R