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NTD20P06LT4G, NTD23N03R, NTD23N03R-001

Table of contents:
Info of NTD20P06LT4G
Info of NTD23N03R
Info of NTD23N03R-001

NTD20P06LT4G, NTD23N03R, NTD23N03R-001 Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:2007+

NTD20P06LT4G, NTD23N03R, NTD23N03R-001 Datasheet download

Five Points

Part Number: NTD20P06LT4G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: 2009+ROHS

D/C: 2007+

Description: MOSFET P-CH 60V 15.5A DPAK

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NTD20P06LT4G Parameters

Technical/Catalog Information	NTD20P06LT4G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15.5A
Rds On (Max) @ Id, Vgs	150 mOhm @ 7.5A, 5V
Input Capacitance (Ciss) @ Vds	1190pF @ 25V
Power - Max	65W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	26nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD20P06LT4G NTD20P06LT4G NTD20P06LT4GOSDKR ND NTD20P06LT4GOSDKRND NTD20P06LT4GOSDKR

NTD23N03R Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	25	Vdc
Gate−to−Source Voltage − Continuous	V_GS	±20	Vdc
Thermal Resistance − Junction−to−Case Total Power Dissipation @ T_C= 25 Drain Current − Continuous @ T_C = 25, Chip − Continuous @ T_C = 25,Limited by Package − Single Pulse	R_JC P_D I_D I_D I_DM	5.6 22.3 23 17.1 40	/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ T_A= 25 Drain Current − Continuous @ T_A= 25	R_JA P_D I_D	76 1.64 4.5	/W W A
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ T_A= 25 Drain Current − Continuous @ T_A = 25	R_JA P_D I_D	110 1.14 3.8	/W W A
Operating and Storage Temperature Range	T_J, T_stg	−55 to +150
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad size.

NTD23N03R Features

• Pb−Free Packages are Available
• Planar HD3e Process for Fast Switching Performance
• Low R_DS(on) to Minimize Conduction Loss
• Low C_iss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters

NTD23N03R Connection Diagram

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