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NTD24N06T4G, NTD25P03L, NTD25P03L1

Table of contents:
Info of NTD24N06T4G
Info of NTD25P03L
Info of NTD25P03L1

NTD24N06T4G, NTD25P03L, NTD25P03L1 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:94000

NTD24N06T4G, NTD25P03L, NTD25P03L1 Datasheet download

Five Points

Part Number: NTD25P03L1

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: 2009+ROHS

D/C: 94000

Description: MOSFET P-CH 30V 25A TO-251A

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NTD24N06T4G Parameters

Technical/Catalog Information	NTD24N06T4G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	42 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	1.36W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	48nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD24N06T4G NTD24N06T4G NTD24N06T4GOSCT ND NTD24N06T4GOSCTND NTD24N06T4GOSCT

NTD25P03L General Description

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast recovery diode.

NTD25P03L Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	-30	V
Gate−to−Source Voltage − Continuous − Non−repetitive (tp10 ms)	V_GS V_GS	±15 ±20	V Vdc
Drain Current − Continuous @ TA = 25°C − Single Pulse (tp10 s), TJ = 175°C	I_D I_D I_D I_DM	−25 −75	A Apk
Total Power Dissipation @ TA = 25°C	P_D	75	Watts
Operating and Storage Temperature Range	T_J, T_stg	−55 to +150	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25)	EAS	200	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)	R_JC R_JA R_JA	1.65 67 120	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds	T_L	260	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.

NTD25P03L Typical Application

• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits
• Pb−Free Package is Available

NTD25P03L Connection Diagram

NTD25P03L1 Parameters

Technical/Catalog Information	NTD25P03L1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	80 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds	1260pF @ 25V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD25P03L1 NTD25P03L1 NTD25P03L1OS ND NTD25P03L1OSND NTD25P03L1OS

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