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NTD40N03G, NTD40N03R, NTD40N03R-001

NTD40N03G, NTD40N03R, NTD40N03R-001 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:.  D/C:09+

NTD40N03G, NTD40N03R, NTD40N03R-001 Picture

NTD40N03G, NTD40N03R, NTD40N03R-001 Datasheet download

Five Points

Part Number: NTD40N03G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: .

D/C: 09+

Description: MOSFET N-CH 25V 45A DPAK

 

 
 
 
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  • NTD014

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  • NTD110N02RT4G

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About NTD110N02R

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Datasheet: NTD110N02R

File Size: 65651 KB

Manufacturer: ONSEMI [ON Semiconductor]

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Datasheet: NTD40N03R

File Size: 67348 KB

Manufacturer: ONSEMI [ON Semiconductor]

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  • NTD014

  • Pack: SOT D/C: 10+& Qty: 6430 Note: new &original?  Adddate: 2024-04-28
  • Inquire Now
  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • NTD110N02RT4G

  • Vendor: ON Qty: 3940 Note: 0  Adddate: 2024-04-28
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About NTD110N02R

PDF/DataSheet Download

Datasheet: NTD110N02R

File Size: 65651 KB

Manufacturer: ONSEMI [ON Semiconductor]

Download : Click here to Download

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NTD40N03R Maximum Ratings

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 25 Vdc
Drain−to−Gate Voltage (RGS = 10 M) VDGR ±20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C, Chip
− Continuous @ TA = 25°C, Limited by Wires
− Single Pulse (tp 3 10 s)
RJC
PD
PD
ID
IDM
3.0
50
45
32
100
°C/W
W
AAA
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
PD 71.4
2.1
9.2
°C/W
W
A
Operating and Storage Temperature Range TJ, Tstg −55 to
+175
°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C

RJA
PD
lD
100
1.5
7.8
°C/W
W
A
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.

NTD40N03R Features

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
  High−Efficiency DC−DC Converters
• Pb−Free Packages are Available

NTD40N03R Connection Diagram

NTD40N03R-001 Parameters

Technical/Catalog InformationNTD40N03R-001
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C7.8A
Rds On (Max) @ Id, Vgs16.5 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 584pF @ 20V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs5.78nC @ 4.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD40N03R 001
NTD40N03R001
NTD40N03R 001OS ND
NTD40N03R001OSND
NTD40N03R-001OS

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