MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:2008+ D/C:3300
NTD4809NAT4G, NTD4809NAT4HP1, NTD4809NH Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: 2008+
D/C: 3300
Description: MOSFET N-CH 30V 9A DPAK
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PDF/DataSheet Download
Datasheet: NTD110N02R
File Size: 65651 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD110N02R
File Size: 65651 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD4809NH-1G
File Size: 83752 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NTD4809NAT4G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1456pF @ 12V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 13nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTD4809NAT4G NTD4809NAT4G |
| Parameter | Symbol | Value | Unit | ||
| Drain-to-Source Voltage | VDSS | 30 | V | ||
| Gate-to-Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current RJA (Note 1) |
Steady State |
TA = 25°C | ID | 11.5 | A |
| TA = 85°C | 9.0 | ||||
| Power Dissipation RJA (Note 1) |
TA = 25°C | PD | 2.0 | W | |
| Continuous Drain Current RJA (Note 2) |
TA = 25°C | ID | 9.0 | A | |
| TA = 85°C | 7.0 | ||||
| Power Dissipation RJA (Note 2) |
TA = 25°C | PD | 1.3 | W | |
| Continuous Drain Current RJC (Note 1) |
TA = 25°C | ID | 58 | A | |
| TA = 85°C | 45 | ||||
| Power Dissipation RJC (Note 1) |
TA = 25°C | PD | 52 | W | |
| Pulsed Drain Current |
TA = 25°C | IDM | 130 | A | |
| Current Limited by Package | TA = 25°C | IDmaxPkg | 45 | A | |
| Operating Junction and Storage Temperature |
TJ, TSTG |
-55 to +175 |
°C | ||
| Source Current (Body Diode) | IS | 43 | A | ||
| Drain to Source dV/dt | dV/dt | 6.0 | V/ns | ||
| Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 15 A, RG = 25 ) |
EAS | 112.5 | mJ | ||
| Lead Temperature for Soldering Purposes (1/8" from case for 10 s) |
TL | 260 | °C | ||
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