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Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 6.32 Apk, L = 1.0 mH, RG = 25 )
EAS
20
mJ
Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size.
NTD50N03R Features
• Planar Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available
NTD50N03R Typical Application
• VCORE DC−DC Buck Converter Applications • Optimized for High Side Switching