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NTD5N50, NTD60N02R, NTD60N02R-001

Table of contents:
Info of NTD5N50
Info of NTD60N02R
Info of NTD60N02R-001

NTD5N50, NTD60N02R, NTD60N02R-001 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:2006

NTD5N50, NTD60N02R, NTD60N02R-001 Datasheet download

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Part Number: NTD60N02R

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: N/A

D/C: 2006

Description: MOSFET N-CH 25V 8.5A DPAK

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NTD60N02R Parameters

Technical/Catalog Information	NTD60N02R
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	8.5A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1330pF @ 20V
Power - Max	1.25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD60N02R NTD60N02R

NTD60N02R Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	24	Vdc
Gate−to−Source Voltage − Continuous	V_DGR	±20	Vdc
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Continuous Drain Current @ TC = 25°C (Note 4) Continuous Drain Current @ TC = 100°C	R_JC P_D I_DI_D	2.6 58 62 50 32	°C/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3)	R_JAP_D I_D	80 1.87 10.5	C/W W A
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3)	R_JAP_D I_D	80 1.87 10.5	C/W W A
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3)	T_J,T_stg	−55 to175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W)	E_AS	60	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.

NTD60N02R Features

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
• Pb−Free Packages are Available

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