MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:500
NTD80N02T4G, NTD85N02, NTD85N02R Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: .
D/C: 500
Description: MOSFET N-CH 24V 12A DPAK
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PDF/DataSheet Download
Datasheet: NTD80N02T4G
File Size: 84693 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD85N02R
File Size: 75244 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD85N02R
File Size: 75244 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NTD80N02T4G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 20V |
| Power - Max | 75W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 42nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTD80N02T4G NTD80N02T4G NTD80N02T4GOSTR ND NTD80N02T4GOSTRND NTD80N02T4GOSTR |
| Technical/Catalog Information | NTD85N02R |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 2050pF @ 20V |
| Power - Max | 1.25W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17.7nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NTD85N02R NTD85N02R |
| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage | VDSS | 24 | Vdc |
| Drain−to−Gate Voltage (RGS = 10 M) | VDGR | ±20 | Vdc |
| Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp 10s) |
RJC PD ID ID IDM |
1.6 78.1 85 32 96 |
°C/W W A A A |
| Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) |
RJA PD ID |
52 2.4 16 |
°C/W W A |
| Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) |
RJA PD ID |
100 1.25 12 |
°C/W W A |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 |
|
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) =13 Apk, VDS = 60 Vdc) |
EAS | 30 | mJ |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 |
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).
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