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PBSS2515VPN, PBSS2515YPN, PBSS2540F

PBSS2515VPN, PBSS2515YPN, PBSS2540F Selling Leads, Datasheet

MFG:PHIL  Package Cooled:ph  D/C:08+09+

PBSS2515VPN, PBSS2515YPN, PBSS2540F Picture

PBSS2515VPN, PBSS2515YPN, PBSS2540F Datasheet download

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Part Number: PBSS2515VPN

 

MFG: PHIL

Package Cooled: ph

D/C: 08+09+

 

 

 
 
 
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  • PBSS

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 45000 Note: original  Adddate: 2024-04-29
  • Inquire Now
  • shantou shunhe industrial co.,ltd.   China
    Contact: Mr.karisonlian   MSN:stshunhe@hotmail.com
    Tel: 86-754-4476558
    Fax: 86-754-4477653
    (0)

About PBSS2515VPN

PDF/DataSheet Download

Datasheet: PBSS2515VPN

File Size: 91269 KB

Manufacturer: Philips

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PBSS2515YPN Suppliers

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  • PBSS

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 45000 Note: original  Adddate: 2024-04-29
  • Inquire Now
  • shantou shunhe industrial co.,ltd.   China
    Contact: Mr.karisonlian   MSN:stshunhe@hotmail.com
    Tel: 86-754-4476558
    Fax: 86-754-4477653
    (0)

About PBSS2515YPN

PDF/DataSheet Download

Datasheet: PBSS2515YPN

File Size: 93730 KB

Manufacturer: Philips

Download : Click here to Download

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PBSS2540F Suppliers

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  • PBSS

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 45000 Note: original  Adddate: 2024-04-29
  • Inquire Now
  • shantou shunhe industrial co.,ltd.   China
    Contact: Mr.karisonlian   MSN:stshunhe@hotmail.com
    Tel: 86-754-4476558
    Fax: 86-754-4477653
    (0)

About PBSS2540F

PDF/DataSheet Download

Datasheet: PBSS2540F

File Size: 65162 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PBSS2515VPN General Description

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package.

PBSS2515VPN Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
15
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current (DC)
-
500
mA
ICM
peak collector current
-
1
A
IBM
peak base current
-
-100
mA
Ptot
total power dissipation
Tamb 25 °C1
-
200
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
operating ambient temperature
-65
+150
°C
Per device
Ptot
total power dissipation Tamb 25 °C1
-
300
mW
1. Transistor mounted on an FR4 printed-circuit board.

PBSS2515VPN Features

· 300 mW total power dissipation
· Very small 1.6 x 1.2 mm ultra thin package
· Excellent coplanarity due to straight leads
· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat lead
· Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs

PBSS2515VPN Typical Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).

PBSS2515VPN Connection Diagram

PBSS2515YPN General Description

NPN/PNP low VCEsat transistor pair in a SC-88 plastic package.

PBSS2515YPN Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
15
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current (DC)
-
500
mA
ICM
peak collector current
-
1
A
IBM
peak base current
-
-100
mA
Ptot
total power dissipation
Tamb 25 °C
-
250
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
operating ambient temperature
-65
+150
°C
Per device
Ptot
total power dissipation Tamb 25 °C1
-
300
mW
1. Transistor mounted on an FR4 printed-circuit board.

PBSS2515YPN Features

· Low collector-emitter saturation voltage
· High current capability
· Replaces two SC-70 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs

PBSS2515YPN Typical Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).

PBSS2515YPN Connection Diagram

PBSS2540F General Description

NPN low VCEsat transistor in a SC-89 (SOT490) plastic package.

PNP complement: PBSS3540F.

PBSS2540F Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC)   - 500 mA
ICM average collector current   - 1 A
IBM peak base current   - 100 mA
Ptot total power dissipation Tamb 25 °C
  250 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C

PBSS2540F Features

· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat leads
· Enhanced performance over SOT23 general purpose transistors.

PBSS2540F Typical Application

· General purpose switching and muting
· Low frequency driver circuits
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras, hand-held devices).

PBSS2540F Connection Diagram

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