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PBSS2515VS

Features: · 300 mW total power dissipation· Very small 1.6 x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat lead· Replaces two SC-75/SC-89 packaged low VCEsat transist...

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SeekIC No. : 004455621 Detail

PBSS2515VS: Features: · 300 mW total power dissipation· Very small 1.6 x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Low collector-emitter saturation voltage· High current capability...

PBSS2515VS Data Sheet

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Part Number:
PBSS2515VS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 x 1.2 mm ultra thin package
· Excellent coplanarity due to straight leads
· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat lead
· Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.


Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified
VCBO collector-base voltage open emitter - -15 V
VCEO collector-emitter voltage open base - -15 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC) - -500 A
ICM peak collector current limited by Tj max - -1 A
IB base current (DC) - -100 mA
Ptot total power dissipation Tamb 25 °C; note 1 - 200 mW
Tstg storage temperature -65 +150 mW
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Per device
Ptot total power dissipation Tamb 25 °C; note 2 - 300 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.


Description

NPN low VCEsat double transistor PBSS2515VS in a SOT666 plastic package.
PNP complement: PBSS3515VS.


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