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PBSS3515VS115, PBSS3540F SOT416-2D, PBSS4120T

Table of contents:
Info of PBSS3515VS115
Info of PBSS3540F SOT416-2D
Info of PBSS4120T

PBSS3515VS115, PBSS3540F SOT416-2D, PBSS4120T Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:SOT23 D/C:O9+

PBSS3515VS115, PBSS3540F SOT416-2D, PBSS4120T Picture

PBSS3515VS115, PBSS3540F SOT416-2D, PBSS4120T Datasheet download

Five Points

Part Number: PBSS3515VS115

MFG: PHILIPS

Package Cooled: SOT23

D/C: O9+

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PBSS4120T General Description

NPN BISS transistor in a SOT23 plastic package providing ultra low V_CEsatand RCEsat parameters.

PNP complement: PBSS5120T.

PBSS4120T Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	30	V
V_CEO	collector-emitter voltage	open base	-	20	V
V_EBO	emitter-base voltage	open collector	-	5	V
I_C	collector current (DC)		-	1	A
I_CM	average collector current		-	3	A
I_BM	peak base current		-	300	A
P_tot	total power dissipation	Tamb 25 °C;note 1	-	300	mW
P_tot	total power dissipation	Tamb 25 °C;note 2	-	480	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	ambient temperature		-65	+150	°C

Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².

PBSS4120T Features

· Low collector-emitter saturation voltage V_CEsat· High collector current capability I_C and I_CM· High efficiency leading to less heat generation
· Reduced printed-circuit board requirements
· Cost effective alternative to MOSFETs in specific applications.

PBSS4120T Typical Application

` Power management
DC/DC conversion
Supply line switching
Battery charger
LCD backlighting.
` Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load drivers (e.g. relays, buzzers and motors).

PBSS4120T Connection Diagram

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