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NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package.
PBSS4140DPN Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
40
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current (DC)
-
1
mA
ICM
average collector current
-
2
A
IBM
peak base current
-
1
mA
Ptot
total power dissipation
Tamb 25 °C; note 1
370
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
+150
°C
Per device
Ptot
total power dissipation
Tamb 25 °C; note 1
-
600
mW
Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
PBSS4140DPN Features
· 600 mW total power dissipation · Low collector-emitter saturation voltage · High current capability · Improved device reliability due to reduced heat generation · Replaces two SOT23 packaged low VCEsat transistors on same PCB area · Reduces required PCB area · Reduced pick and place costs.
PBSS4140DPN Typical Application
· General purpose switching and muting · LCD backlighting · Supply line switching circuits · Battery driven equipment (mobile phones, video cameras and hand-held devices).