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PBSS4140T/ZT, PBSS4140T/ZTP, PBSS4140V

PBSS4140T/ZT, PBSS4140T/ZTP, PBSS4140V Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOT-23  D/C:1000

PBSS4140T/ZT, PBSS4140T/ZTP, PBSS4140V Picture

PBSS4140T/ZT, PBSS4140T/ZTP, PBSS4140V Datasheet download

Five Points

Part Number: PBSS4140T/ZT

 

MFG: PHILIPS

Package Cooled: SOT-23

D/C: 1000

 

 

 
 
 
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  • PBSS

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 45000 Note: original  Adddate: 2024-03-29
  • Inquire Now
  • shantou shunhe industrial co.,ltd.   China
    Contact: Mr.karisonlian   MSN:stshunhe@hotmail.com
    Tel: 86-754-4476558
    Fax: 86-754-4477653
    (0)

About PBS400

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Datasheet: PBS400

File Size: 17651 KB

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PBSS4140T/ZTP Suppliers

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  • PBSS

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 45000 Note: original  Adddate: 2024-03-29
  • Inquire Now
  • shantou shunhe industrial co.,ltd.   China
    Contact: Mr.karisonlian   MSN:stshunhe@hotmail.com
    Tel: 86-754-4476558
    Fax: 86-754-4477653
    (0)

About PBS400

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Datasheet: PBS400

File Size: 17651 KB

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PBSS4140V Suppliers

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  • PBSS

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 45000 Note: original  Adddate: 2024-03-29
  • Inquire Now
  • shantou shunhe industrial co.,ltd.   China
    Contact: Mr.karisonlian   MSN:stshunhe@hotmail.com
    Tel: 86-754-4476558
    Fax: 86-754-4477653
    (0)

About PBSS4140V

PDF/DataSheet Download

Datasheet: PBSS4140V

File Size: 63838 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PBSS4140V General Description

NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V.

PBSS4140V Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 A
ICM average collector current single peak - 3 A
IBM peak base current   - 2 A
Ptot total power dissipation Tamb 25 °C;note 2
-
300

mW
Tamb 25 °C;note 3 - 500 mW
Tamb 25 °C;note 1 and 2 - 1.2 m
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Notes
1. Operated under pulsed conditions: tp £ 30 ms; d   0.2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

PBSS4140V Features

· 300 mW total power dissipation
· Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
· Improved thermal behaviour due to flat leads
· Excellent coplanarity due to straight leads
· Low collector-emitter saturation voltage
· High current capabilities
· Reduced required PCB area.

PBSS4140V Typical Application

· General purpose switching and muting
· LCD backlighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).

PBSS4140V Connection Diagram

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