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PNP low VCEsat transistor in a SOT363 (SC-88) plastic package.
NPN complement: PBSS4240Y.
PBSS5240Y Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
-40
V
VCEO
collector-emitter voltage
open base
-
-40
V
VEBO
emitter-base voltage
open collector
-
-5
V
IC
collector current (DC)
-
-2
A
ICM
average collector current
single peak
-
-3
A
IBM
peak base current
-
-300
A
Ptot
total power dissipation
Tamb 25 °C;note 1
-
270
mW
Tamb 25 °C;note 2
-
130
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
+150
°C
Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
PBSS5240Y Features
· Low collector-emitter saturation voltage · High current capability · Improved device reliability due to reduced heat generation · Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.
PBSS5240Y Typical Application
· Supply line switching circuits · Battery management applications · DC/DC converter applications · Strobe flash units · Heavy duty battery powered equipment (motor and lamp drivers).