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PBSS5350T215, PBSS5350X, PBSS5350Z

Table of contents:
Info of PBSS5350T215
Info of PBSS5350X
Info of PBSS5350Z

PBSS5350T215, PBSS5350X, PBSS5350Z Selling Leads, Datasheet

MFG:NXP Package Cooled:SOT23 D/C:09+

PBSS5350T215, PBSS5350X, PBSS5350Z Picture

PBSS5350T215, PBSS5350X, PBSS5350Z Datasheet download

Five Points

Part Number: PBSS5350T215

MFG: NXP

Package Cooled: SOT23

D/C: 09+

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PBSS5350X General Description

PNP low V_CEsat transistor in a SOT89 plastic package.

NPN complement: PBSS4350X.

PBSS5350X Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	-50	V
V_CEO	collector-emitter voltage	open base	-	-50	V
V_EBO	emitter-base voltage	open collector	-	-5	V
I_C	collector current (DC)	note 4	-	-3	A
I_CM	average collector current	limited by Tj max	-	-5	A
I_B	base current (DC)		-	-0.5	A
P_tot	total power dissipation	Tamb 25 °C note 1 note 2 note 3 note 4	- - - -	550 1 1.4 1.6	mW W W W
T_j	junction temperature		-	150	°C
T_amb	ambient temperature		-65	+150	°C
T_stg	storage temperature		-65	+150	°C

Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm².
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 6 cm².
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tinplated.

PBSS5350X Features

· SOT89 (SC-62) package
· Low collector-emitter saturation voltage V_CEsat
· High collector current capability: I_C and I_CM· Higher efficiency leading to less heat generation
· Reduced printed-circuit board requirements.

PBSS5350X Typical Application

` Power management
DC/DC converters
Supply line switching
Battery charger
LCD backlighting.
` Peripheral drivers
Driver in low supply voltage applications (e.g. lamps and LEDs).
Inductive load driver (e.g. relays, buzzers and motors).

PBSS5350X Connection Diagram

PBSS5350Z General Description

PNP low V_CEsattransistor in a SOT223 plastic package.

NPN complement: PBSS4350Z.

PBSS5350Z Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	-60	V
V_CEO	collector-emitter voltage	open base	-	-50	V
V_EBO	emitter-base voltage	open collector	-	-6	V
I_C	collector current (DC)		-	-3	A
I_CM	average collector current		-	-5	A
I_BM	peak base current			-1	A
P_tot	total power dissipation	Tamb 25 °C; notes 1 and 3	-	1.35	W
P_tot	total power dissipation	Tamb 25 °C; notes 2 and 3	-	2	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	ambient temperature		-65	+150	°C

Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm².
3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook".

PBSS5350Z Features

· Low collector-emitter saturation voltage
· High collector current capability: IC and ICM
· High collector current gain (hFE) at high I_C
· Higher efficiency leading to less heat generation
· Reduced PCB area requirements compared to DPAK.

PBSS5350Z Typical Application

` Power management
DC/DC converters
Supply line switching
Battery charger
Linear voltage regulation (LDO).
` Peripheral drivers
Driver in low supply voltage applications, e.g. lamps, LEDs
Inductive load driver, e.g. relays, buzzers, motors.

PBSS5350Z Connection Diagram

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