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PGH3016AM, PGH308, PGH308A

Table of contents:
Info of PGH3016AM
Info of PGH308
Info of PGH308A

PGH3016AM, PGH308, PGH308A Selling Leads, Datasheet

MFG:NIEC Package Cooled:N/A D/C:07+

PGH3016AM, PGH308, PGH308A Datasheet download

Five Points

Part Number: PGH3016AM

MFG: NIEC

Package Cooled: N/A

D/C: 07+

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PGH308 Maximum Ratings

Parameter			Conditions		Max Rated Value	Unit
Average Rectified Output Current		I_O(AV)	3 Phase Full Wave Rectified Tc=80		30	A
Operating JunctionTemperature Range		Tjw			-40 to +125
Storage Temperature Range		Tstg			-40 to +125
Isoration Voltage		Viso	Base Plate to Terminals, AC1min		2000	V
Mounting torque	Case mounting	Ftor	Grea sed	M5 Screw	2.4 to 2.8	N•m
	Terminals			M4 Screw	1.2 to 1.6

PGH308 Features

·Isolatde Base
·3 Phase Converter with Rush-Current Controllable Thyristor
·High Surge Capability
·UL Recognized,File No.E187184

PGH308 Typical Application

·Converter For UPS, WVF and Servo Motor Drive Amplifier

PGH308A General Description

The PGH308A is one member of the PGH308 series.It has the following features including (1)Isolated Base;(2)3 Phase Converter with Rush-Current Controllable Thyristor;(3)High Surge Capability;(4)UL Recognized, File No. E187184.Stresses above these ratings may cause permanent damage.Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. A series of module generators using compiled cell generation techniques are available to support a range of megacells. These modules enable the designer to choose individual parameters in order to create a compiled cell, which meets the specific application requirements. These include ROM, single and dual port RAM, multi- port RAM and FIFO, some of them specifically optimized for speed and for power. All memories have a complete standby mode where current consumption is limited to process leakage.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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