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PHK4NQ20T, PHK5NQ10T, PHKD13N03LT

Table of contents:
Info of PHK4NQ20T
Info of PHK5NQ10T
Info of PHKD13N03LT

PHK4NQ20T, PHK5NQ10T, PHKD13N03LT Selling Leads, Datasheet

MFG:NXP Package Cooled:SOP8 D/C:08+

PHK4NQ20T, PHK5NQ10T, PHKD13N03LT Picture

PHK4NQ20T, PHK5NQ10T, PHKD13N03LT Datasheet download

Five Points

Part Number: PHK4NQ20T

MFG: NXP

Package Cooled: SOP8

D/C: 08+

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PHK4NQ20T General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHK4NQ20T in SOT96-1 (SO8).

PHK4NQ20T Features

· Low on-state resistance
· Surface mount package.

PHK4NQ20T Typical Application

· DC-DC primary side switching
· General purpose switch.

PHK5NQ10T General Description

N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology.

PHK5NQ10T Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	Drain-source voltage	T_j = 25 °C to 150°C	-	100	V
V_DGR	Drain-gate voltage	T_j = 25 °C to 150°C; R_GS= 20 k	-	100	V
V_GS	Gate-source voltage	-	-	± 20	V
I_D	Drain current (t_p 10 s)	T_a = 25 °C T_a = 70 °C	-	5 3.6	A A
I_DM	Drain current (pulse peak value)	T_a= 25 °C	-	20	A
P_tot	Total power dissipation	T_a = 25 °C, t 10 s T_a = 70 °C, t 10 s	-	2.5 1.6	W W
T_j T_stg	operating temperature and Storage temperature		-55	150	°C

PHK5NQ10T Features

• Low on-state resistance
• Fast switching
• Low profile surface mount
package

PHK5NQ10T Typical Application

• Motor and relay drivers
• d.c. to d.c. converters

PHKD13N03LT General Description

Dual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS™ technology.
Product availability:
PHKD13N03LT in SOT96-1 (SO8).

PHKD13N03LT Features

· Low gate charge

· Surface mount package

· Low on-state resistance

· Fast switching

PHKD13N03LT Typical Application

· Portable appliances

· Notebook computers

·Lithium-ion battery chargers

·DC-to-DC converters.

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