PHP21N06T, PHP222, PHP222NQ04LT Selling Leads, Datasheet
MFG:PH Package Cooled:9800 D/C:09+
PHP21N06T, PHP222, PHP222NQ04LT Datasheet download
Part Number: PHP21N06T
MFG: PH
Package Cooled: 9800
D/C: 09+
MFG:PH Package Cooled:9800 D/C:09+
PHP21N06T, PHP222, PHP222NQ04LT Datasheet download
MFG: PH
Package Cooled: 9800
D/C: 09+
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PDF/DataSheet Download
Datasheet: PHP21N06T
File Size: 66624 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP222
File Size: 55944 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP222NQ04LT
File Size: 96005 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes givingESD protection up to 2kV. It is intended for use in converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 55 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
±VGS | Gate-source voltage | - | - | 20 | V |
ID | Drain current (DC) | Tmb = 25 °C | - | 21 | A |
ID | Drain current (DC) | Tmb = 100 °C | 14.7 | A | |
IDM | Drain current (pulse peak value) |
Tmb = 25 °C | - | 84 | A |
Ptot | Total power dissipation | Tmb = 25 °C | - | 69 | W |
Tj Tstg | operating temperature and Storage temperature | - | -55 | 175 | °C |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 40 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 40 | V |
VGS | gate-source voltage (DC) | - | ±15 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 300 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75 A; tp = 0.29 ms; VDD 40 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 560 | mJ |