PHP5N40, PHP5N40E, PHP60N06LT Selling Leads, Datasheet
MFG:PHI Package Cooled:TO-220 D/C:96+
PHP5N40, PHP5N40E, PHP60N06LT Datasheet download
Part Number: PHP5N40
MFG: PHI
Package Cooled: TO-220
D/C: 96+
MFG:PHI Package Cooled:TO-220 D/C:96+
PHP5N40, PHP5N40E, PHP60N06LT Datasheet download
MFG: PHI
Package Cooled: TO-220
D/C: 96+
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Datasheet: PHP5N40
File Size: 55467 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP5N40E
File Size: 21617 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP60N06LT
File Size: 72719 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL |
PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
ID |
Continuous drain current |
Tmb = 25 ; VGS = 10V |
- |
7.2 |
A |
IDM |
Pulsed drain current | Tmb = 25 | - |
29 |
A |
PD |
Total dissipation | Tmb = 25 | - |
125 |
W |
PD/Tmb |
Linear derating factor | Tmb > 25 | - |
1 |
W/K |
VGS |
Gate-source voltage | - |
± 30 |
V | |
EAS |
Single pulse avalanche energy | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
290 |
mJ |
IAS |
Peak avalanche current | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
5.5 |
A |
Tj, Tstg |
Operating junction and storage temperature range | -55 |
150 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and power high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
Drain-source voltage |
- |
- |
400 |
V |
VDGR |
Drain-gate voltage |
RGS = 20 W |
- |
400 |
V |
±VGS |
Gate-source voltage |
- |
- |
30 |
V |
ID |
Drain current (DC) |
Tmb = 25 |
- |
6.5 4.1 |
A |
IDM |
Drain current (pulse peak value) |
Tmb = 100 |
- |
26 |
A |
IDR |
Source-drain diode current (DC) | Tmb = 25 |
- |
6.5 |
|
IDRM |
Drain current (pulse peak value) |
Tmb = 25 |
- |
26 |
A |
Ptot |
Total power dissipation |
Tmb = 25 |
- |
100 |
W |
Tstg |
Storage temperature | - |
-55 |
150 |
|
Tj |
Junction temperature |
- |
- |
150 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP60N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB60N06LT is supplied in the SOT404 surface mounting package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS | Drain-source voltage | Tj =25 to 175 | - | 55 | V |
VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 55 | V |
VGS | Gate-source voltage | -- | ±13 | V | |
ID | Continuous drain current | Tmb = 25 | 58 | A | |
Tmb = 100 | - | 40 | A | ||
IDM | Pulsed drain current | Tmb = 25 | - | 232 | A |
PD | Total power dissipation | Tmb = 25 | - | 150 | W |
Tj, Tstg | Operating junction and storage temperature |
-55 | 175 |