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• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V • Using new Diode which is designed to get soft reverse recovery characteristics. • 3 200A, 600V Current-sense IGBT for 15kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 22kW class inverter application