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PM200CSE060

Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 200A, 600V Current-sense IGBT for 15kHz s...

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PM200CSE060: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V• Using new Diode which is desig...

PM200CSE060 Data Sheet

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Part Number:
PM200CSE060
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 200A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 22kW class inverter application




Specifications

Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
±IC Collector Current TC = 25°C 200 A
±ICP Collector Current (Peak) TC = 25°C 400 A
PC Collector Dissipation TC = 25°C 595 W
Tj Junction Temperature 20 ~ +150 °C





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