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PM29F002T-90JC, PM29F002T-90PC, PM29F004

Table of contents:
Info of PM29F002T-90JC
Info of PM29F002T-90PC
Info of PM29F004

PM29F002T-90JC, PM29F002T-90PC, PM29F004 Selling Leads, Datasheet

MFG:PMCFlash Package Cooled:PLCC D/C:02+

PM29F002T-90JC, PM29F002T-90PC, PM29F004 Picture

PM29F002T-90JC, PM29F002T-90PC, PM29F004 Datasheet download

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Part Number: PM29F002T-90JC

MFG: PMCFlash

Package Cooled: PLCC

D/C: 02+

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PM29F004 General Description

The Pm29F004 is a 4 Megabit, 5 Volt-only Flash Memory organized as 524,288 bytes of 8 bits each. This device is designed to use a 5.0 Volt power supply to perform in-system programming, 12.0 Volt VPP power supply for program and erase operation is not required. The device can be programmed in standard EPROM programmers as well.

The 4 Megabit memory array is divided into seven blocks of one 16 Kbytes, two 8 Kbytes, one 96 Kbytes, and three 128 Kbytes for BIOS and parameters storage. The seven blocks allow users to flexibly make chip erase or block erase operation. The block erase feature allows a particular block to be erased and reprogrammed without affecting the data in other blocks. After the device performed chip erase or block erase operation, it can be reprogrammed on a byte-by-byte basis.

The device has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible pin-out and command set. The program operation of Pm29F004 is executed by issuing the program command code into command register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase operation of Pm29F004 is executed by issuing the chip erase or block erase command code into command register. The internal control logic automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before the erase operation. The device also features Data# Polling and Toggle Bit function, the end of program or erase operation can be detected by Data# Polling of I/O7 or Toggle Bit of I/O6.

The device has an optional 16 Kbytes top or bottom boot block with a software lockout feature for data security. The boot block can be used to store user secure code. When the lockout feature is enabled, the boot block is permanently protected from being reprogrammed.

The Pm29F004 is manufactured on PMC's advanced 0.30 µm, P-FLASH™, nonvolatile memory process. The device is packaged in a 32-pin DIP and PLCC with access time of 70 and 90 ns.

PM29F004 Maximum Ratings

Temperature Under Bias	-65°C to +125°C
Storage Temperature	-65°C to +125°C
Input Voltage with Tesperct to Ground on All Pins except A9 pin⁽²⁾	-0.5V to +6.25V
Input Voltage with Respect to Ground on A9 pin⁽³⁾	-0.5V to +13.0V
All Output Voltage with Respect to Ground	-0.5V to V_CC +0.6B
V_CC⁽²⁾	-0.5V to + 6.25V

Notes:
1. Stresses under those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. The functional operation of the device or any other conditions under those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condition for extended periods may affected device reliability.
2. Maximum DC voltage on input or I/O pins are +6.25 V. During voltage transitioning period, input or I/O pins may overshoot to V_CC + 2.0 V for a period of time up to 20 ns. Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O pins may undershoot GND to -2.0 V for a period of time up to 20 ns.
3. Maximum DC voltage on A9 pin is +13.0 V. During voltage transitioning period, A9 pin may overshoot to +14.0 V for a period of time up to 20 ns. Minimum DC voltage on A9 pin is -0.5 V. During voltage transitioning period, A9 pin may undershoot GND to -2.0 V for a period of time up to 20 ns.

PM29F004 Features

• Single Power Supply Operation
- 5.0 V ± 10% Read/Program/Erase
• High Performance Read
- 70/90 ns access time
• Memory Blocks Architecture
- One 16 Kbytes top or bottom Boot Block with software lockout
- Two 8 Kbytes Parameter Blocks
- One 96 Kbytes Main Block
- Three 128 Kbytes Main Blocks
• Automatic Block Erase and Byte Program
- Typical 12 ms/byte programming
- Typical 50 ms block or chip erase
• Hardware Data Protection
• Data# Polling and Toggle Bit Features
• Low Power Consumption
- Typical 15 mA active read current
- Typical 40 mA program/erase current
- Typical 0.1 mA CMOS standby current
• High Product Endurance
- Guarantee 10,000 program/erase cycles
- Typical 50,000 program/erase cycles
- Minimum 10 years data retention
• Industrial Standard Pin-out and Packaging
- 32-pin Plastic DIP
- 32-pin PLCC
• Manufactured on 0.30 µm process

PM29F004 Connection Diagram

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