R1.25-4, R1000, R1000-250-1E Selling Leads, Datasheet
MFG:JST Package Cooled:QFP D/C:Original,Rohs
R1.25-4, R1000, R1000-250-1E Datasheet download
Part Number: R1.25-4
MFG: JST
Package Cooled: QFP
D/C: Original,Rohs
R1.25-4, R1000, R1000-250-1E
- Table of contents:
Info of R1.25-4
Info of R1000
Info of R1000-250-1E
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About R10000250000A000
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About R10
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Datasheet: R10
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R1000 General Description
Mimix Broadband's 17.0-27.0 GHz GaAs MMIC receiver has a small signal conversion gain of 10.0 dB with a noise figure of 3.5 dB and 15.0 dB image rejection across the band. The device is a three stage LNA followed by an image reject fundamental mixer using Lange couplers to improve bandwidth. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
R1000 Maximum Ratings
Supply Voltage (Vcc) +6.0 VDC
Supply Current (Id) 200 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (RF Pin) +10.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table2
Junction Temperature (Tj) MTTF Table2
(2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
R1000 Features
Fundamental Integrated Receiver
10.0 dB Conversion Gain
3.5 dB Noise Figure
15.0 dB Image Rejection
60.0 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
10.0 dB Conversion Gain
3.5 dB Noise Figure
15.0 dB Image Rejection
60.0 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
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