R1000

Supply Voltage (Vcc)                        +6.0 VDC
Supply Current (Id)                          200 mA
Gate Bias Voltage (Vg)                     +0.3 VDC
Input Power (RF Pin)                        +10.0 dBm
Storage Temperature (Tstg)             -65 to +165
Operating Temperature (Ta)             -55 to MTTF Table²
Junction Temperature (Tj)                  MTTF Table²

(2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.

Mimix Broadband's 17.0-27.0 GHz GaAs MMIC receiver has a small signal conversion gain of 10.0 dB with a noise figure of 3.5 dB and 15.0 dB image rejection across the band. The R1000 is a three stage LNA followed by an image reject fundamental mixer using Lange couplers to improve bandwidth. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This R1000 uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The R1000 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.