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RA07H4752M, RA07M0608M, RA07M1317

Table of contents:
Info of RA07H4752M
Info of RA07M0608M
Info of RA07M1317

RA07H4752M, RA07M0608M, RA07M1317 Selling Leads, Datasheet

MFG:mitsubishi Package Cooled:H2S D/C:09+

RA07H4752M, RA07M0608M, RA07M1317 Picture

RA07H4752M, RA07M0608M, RA07M1317 Datasheet download

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Part Number: RA07H4752M

MFG: mitsubishi

Package Cooled: H2S

D/C: 09+

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RA07M0608M General Description

The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to 88-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA07M0608M Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG=0V, Pin=0W	12	V
V_DD	Drain Voltage	V_GG<5V	9.2	V
V_GG	Gate Voltage	V_DD<7.2V, Pin=0W	5.5	V
P_in	Input Power	f=806-870MHz, Z_G=Z_L=50	50	mW
P_out	Output Power	f=806-870MHz, Z_G=Z_L=50	10	W
T_case(OP)	Operation Case Temperature Range		-30 to +90	°C
_Tstg	Storage Temperature Range		-40 to +110	°C

The above parameters are independently guaranteed.

RA07M0608M Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW
• T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW
• Broadband Frequency Range: 66-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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