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RA02M8087MD

Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)• Pout>34dBm @ VDD=7.2V, Pin=16dBmIdq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,• T>30% @ VDD=7.2V, Pout=34dBm (Pin adjust.),Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)• IMD3<-26dBc @ ...

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SeekIC No. : 004469589 Detail

RA02M8087MD: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)• Pout>34dBm @ VDD=7.2V, Pin=16dBmIdq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,• T>30% @ VDD=7.2V...

RA02M8087MD Data Sheet

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Part Number:
RA02M8087MD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)
• Pout>34dBm @ VDD=7.2V, Pin=16dBm
Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,
• T>30% @ VDD=7.2V, Pout=34dBm (Pin adjust.),
Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
• IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.)
Two tone test at 1KHz separation
Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
• Broadband Frequency Range: 806-869MHz
• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
 Drain Voltage VGG<3.5V
9.2
V
VGG1
 Gate Voltage VDD<7.2V, Pin=0mW
4
V
VGG2
 Gate Voltage VDD<7.2V, Pin=0mW
4
V
Pin
 Input Power f=806-869MHz, ZG=ZL=50
100
mW
Pout
 Output Power
4
W
T case(OP)
 Operation Case Temperature Range
-30 to +90
Tstg
 Storage Temperature Range
-40 to +110





Description

The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 806 to 869 MHz range.




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