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RA03M3540MD

Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)• Pout>38dBm @ VDD=7.2V, Pin=19dBmIdq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.)• T>35% @ VDD=7.2V, Pout=38dBm (Pin adjust.),Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)• IMD3<-25dBc @ VDD=7.2V...

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SeekIC No. : 004469590 Detail

RA03M3540MD: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)• Pout>38dBm @ VDD=7.2V, Pin=19dBmIdq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.)• T>35% @ VDD=7.2V, Pou...

RA03M3540MD Data Sheet

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Part Number:
RA03M3540MD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V)
• Pout>38dBm @ VDD=7.2V, Pin=19dBm
Idq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.)
• T>35% @ VDD=7.2V, Pout=38dBm (Pin adjust.),
Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)
• IMD3<-25dBc @ VDD=7.2V, Pout (average) =35dBm (Pin adjust.)
Two tone test at 1KHz separation
Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)
• Broadband Frequency Range: 350-400MHz
• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm




Specifications

SYMBOL PARAMETER CONDITIONS
RATING
UNIT
VDD Drain Voltage VGG<3.5V
9.2
V
VGG1 Gate Voltage VDD<7.2V, Pin=0mW
4
V
VGG2 Gate Voltage VDD<7.2V, Pin=0mW
4
V
Pin Input Power f=350-400MHz, ZG=ZL=50
100
mW
Pout Output Power
10
W
Tcase(OP) Operation Case Temperature Range
-30 to +90
Tstg Storage Temperature Range
-40 to +110
The above parameters are independently guaranteed.




Description

The RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 350 to 400 MHz range.




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