RA07N1317M, RA07N3340M, RA07N4047M Selling Leads, Datasheet
MFG:MITSUBSHI Package Cooled:MODULE D/C:08/09+
RA07N1317M, RA07N3340M, RA07N4047M Datasheet download
Part Number: RA07N1317M
MFG: MITSUBSHI
Package Cooled: MODULE
D/C: 08/09+
MFG:MITSUBSHI Package Cooled:MODULE D/C:08/09+
RA07N1317M, RA07N3340M, RA07N4047M Datasheet download
MFG: MITSUBSHI
Package Cooled: MODULE
D/C: 08/09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: RA02M8087MD-101
File Size: 196999 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RA07N3340M
File Size: 86203 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RA07N4047M
File Size: 63697 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VDD | Drain Voltage | VGG<3.5V | 12.5 | V |
VGG | Gate Voltage | VDD<9.6V, Pin=0mW | 4 | V |
Pin | Input Power | f=400-470MHz, ZG=ZL=50 |
30 | mW |
Pout | Output Power | 10 | W | |
Tcase(OP) | Operation Case Temperature Range | -30 to +90 | ||
Tstg | Storage Temperature Range | -40 to +110 |