RF1S9540SM, RF1S9630SM, RF1S9630SM9A Selling Leads, Datasheet
MFG:06+ Package Cooled:KA/INTRISII D/C:TO-
RF1S9540SM, RF1S9630SM, RF1S9630SM9A Datasheet download
Part Number: RF1S9540SM
MFG: 06+
Package Cooled: KA/INTRISII
D/C: TO-
RF1S9540SM, RF1S9630SM, RF1S9630SM9A
- Table of contents:
Info of RF1S9540SM
Info of RF1S9630SM
Info of RF1S9630SM9A
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About RF1S9540SM
PDF/DataSheet Download
Datasheet: RF1S9540SM
File Size: 61211 KB
Manufacturer: INTERSIL [Intersil Corporation]
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About RF1S9630SM
PDF/DataSheet Download
Datasheet: RF1S9630SM
File Size: 65435 KB
Manufacturer: INTERSIL [Intersil Corporation]
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About RF1
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Datasheet: RF1
File Size: 58881 KB
Manufacturer:
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RF1S9540SM General Description
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly Developmental Type TA17521.
Formerly Developmental Type TA17521.
RF1S9540SM Maximum Ratings
| IRF9540, RF1S9540SM |
UNITS | |
| Drain to Source Breakdown Voltage (Note 1) . . . . . VDS | -100 | V |
| Drain to Gate Voltage (RGS = 20k) (Note 1) . .. .. . . .VDGR | -100 | V |
| Continuous Drain Current . . . . . . . . . . ID |
-19 | A |
| TC = 100 . . . . . . . . . . . . . . . . . . ID |
-12 | A |
| Pulsed Drain Current (Note 3) . . . . . . . . . IDM | -76 | A |
| Gate to Source Voltage . . . . . . .. . . . . . VGS | ±20 | V |
| Maximum Power Dissipation (Figure 1) . . . . . . . . PD | 150 | W |
| Linear Derating Factor (Figure 1) . . . . . . . . . . . | 1 | W/ |
| Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS | 960 | mJ |
| Operating and Storage Temperature . . . . . . . . TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL | 300 | |
| Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg | 260 |
RF1S9540SM Features
• 19A, 100V
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RF1S9540SM Connection Diagram
RF1S9630SM General Description
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
Formerly developmental type TA17512.
RF1S9630SM Maximum Ratings
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | -200 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | -200 | V |
| Continuous Drain Current TC = 100 |
ID ID |
-6.5 -4 |
V |
| Pulsed Drain Current (Note 3) | IDM | -26 | A |
| Gate to Source Voltage | VGS | ±20 | |
| Maximum Power Dissipation | PD | 75 | |
| Dissipation Derating Factor | 0.6 | W | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 500 | W/ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S9630SM Features
• 6.5A, 200V
• r DS(ON) = 0.800W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• r DS(ON) = 0.800W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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