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RF1S9640SM, RF2000, RF2001

Table of contents:
Info of RF1S9640SM
Info of RF2000
Info of RF2001

RF1S9640SM, RF2000, RF2001 Selling Leads, Datasheet

MFG:07+ Package Cooled:KA/INTRISII D/C:TO-

RF1S9640SM, RF2000, RF2001 Datasheet download

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Part Number: RF1S9640SM

MFG: 07+

Package Cooled: KA/INTRISII

D/C: TO-

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RF1S9640SM General Description

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

Formerly developmental type TA17522.

RF1S9640SM Maximum Ratings

	IRF9640, RF1S9640SM	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . V_DS	-200	V
Drain to Gate Voltage (R_GS = 20kW) (Note 1) . .. .. . . .V_DGR	-200	V
Continuous Drain Current . . . . . . . . . . I_D	-11	A
T_C = 100 . . . . . . . . . . . . . . . . . . I_D	-7	A
Pulsed Drain Current (Note 2) . . . . . . . . . I_DM	-44	A
Gate to Source Voltage . . . . . . .. . . . . . V_GS	±20	V
Maximum Power Dissipation . . . . . . . . P_D	125	W
Linear Derating Factor . . . . . . . . . . .	1	W/
Single Pulse Avalanche Energy Rating (Note3, 4). . .. . E_AS	790	mJ
Operating and Storage Temperature . . . . . . . . TJ, T_STG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .T_L	300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg	260

RF1S9640SM Features

• 11A, 200V
• rDS(ON) = 0.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

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