RF3376, RF3401E, RF3802 Selling Leads, Datasheet
MFG:RFMD Package Cooled:QFN D/C:New
RF3376, RF3401E, RF3802 Datasheet download
Part Number: RF3376
MFG: RFMD
Package Cooled: QFN
D/C: New
RF3376, RF3401E, RF3802
- Table of contents:
Info of RF3376
Info of RF3401E
Info of RF3802
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About RF3376PCBA-410
PDF/DataSheet Download
Datasheet: RF3376PCBA-410
File Size: 152954 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
About RF3
PDF/DataSheet Download
Datasheet: RF3
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
About RF3802
PDF/DataSheet Download
Datasheet: RF3802
File Size: 63649 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
RF3376 General Description
The RF3376 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC-biasing elements to operate as specified.
RF3376 Maximum Ratings
| Frequency (MHz) | DC to 6000 |
| Gain (dB) | 19.8 at 2000 |
| NF (dB) | 2.0 |
| OP1dB (dBm) | 11.5 |
| OIP3 (dBm) | +24 |
| Vd (V) | 3.4 |
| Vcc (V) | 4.2 |
| Icc (mA) | 35 |
| Package/Size (Dim in mm) | SOT-89 |
RF3376 Features
• DC to >6000MHz Operation
• Internally Matched Input and Output
• 22dB Small Signal Gain
• +2.0dB Noise Figure
• +11dBm Output P1dB
• Internally Matched Input and Output
• 22dB Small Signal Gain
• +2.0dB Noise Figure
• +11dBm Output P1dB
RF3376 Typical Application
• Basestation Applications
• Broadband, Low-Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low-Power Applications
• High Reliability Applications
• Broadband, Low-Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low-Power Applications
• High Reliability Applications
RF3802 General Description
The RF3802 is specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance dual-stage amplifier achieves high output power over a broad frequency range. The RF3802 amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation. Various evaluation board bias configurations are available to address a broad range of wireless infrastructure applications:
• AMPS/GSM850/EDGE850
• GSM900/EDGE900
• IS-95/CDMA2000/AMPS
RF3802 Features
• 5W Output Power
• High Linearity
• 35% Power-Added Efficiency
• AlN Packaging
• Broadband Platform Design Approach
• High Linearity
• 35% Power-Added Efficiency
• AlN Packaging
• Broadband Platform Design Approach
RF3802 Typical Application
• GaAs HBT Pre-Driver for Basestation Amplifiers
• Power Amplifier Stage for Commercial Wireless Infrastructure
• Class AB Operation for GSM/EDGE/CDMA Transmitter Applications
• Power Amplifier Stage for Commercial Wireless Infrastructure
• Class AB Operation for GSM/EDGE/CDMA Transmitter Applications
RF3802 Connection Diagram
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