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Part Number: RF3100-3

 

 

 

 

Description: The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The ...


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RF3100-3 General Description


The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3100-3 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.

RF3100-3 Maximum Ratings

</T
Parameter
Rating
Unit
Supply Voltage(RF off)
+8.0
VDC
Supply Voltage (POUT28dBm)
+5.2
VDC
Mode Voltage (VREG)
+4.2
VDC
Control Voltage (VMODE)
+3.5
VDC
Input RF Power
+10
dBm
Operating Ambient Temperature
-30 to +110
Storage Temperature
-30 to +150

RF3100-3 Features

• Input/Output Internally Matched@50
• Single 3V Supply
• 28dBm Linear Output Power
• -141dBm/Hz Noise Power
• 35% Linear Efficiency
• 45mA Idle Current (Low Power Mode)

RF3100-3 Typical Application

• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm Chipsets

RF3100-3 datasheet

RF3100-3
PDF/DataSheet Download

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