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RFD16N06, RFD16N065M9A, RFD16N06LE

Table of contents:
Info of RFD16N06
Info of RFD16N065M9A
Info of RFD16N06LE

RFD16N06, RFD16N065M9A, RFD16N06LE Selling Leads, Datasheet

MFG:FAIRCHILD Package Cooled:TO-251/252 D/C:TO

RFD16N06, RFD16N065M9A, RFD16N06LE Picture

RFD16N06, RFD16N065M9A, RFD16N06LE Datasheet download

Five Points

Part Number: RFD16N06

MFG: FAIRCHILD

Package Cooled: TO-251/252

D/C: TO

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RFD16N06 General Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

RFD16N06 Maximum Ratings

	RFD16N06, RFD16N06SM	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	16	A
Pulsed Drain Current (Note 3) I_DM	Refer to UIS Curve	A
Gate to Source Voltage V_GS	±20	V
Pulsed Drain Current IDM	Refer to Peak Current Curve	W
Pulsed Avalanche Rating EAS	Figure 6	W
Derate above 25oC	0.2	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD16N06 Features

• 16A, 60V
• rDS(ON) = 0.047W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

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