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RFD16N02LSM

Features: • 16A, 20V• rDS(ON) = 0.022W• Temperature Compensating PSPICE Model• Can be Driven Directly from CMOS, NMOS,and TTL Circuits• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating TemperatureSpecifications RFD16N02L, RFD16N0...

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SeekIC No. : 004476505 Detail

RFD16N02LSM: Features: • 16A, 20V• rDS(ON) = 0.022W• Temperature Compensating PSPICE Model• Can be Driven Directly from CMOS, NMOS,and TTL Circuits• Peak Current vs Pulse Width Curv...

RFD16N02LSM Data Sheet

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Part Number:
RFD16N02LSM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 16A, 20V
• rDS(ON) = 0.022W
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature


Specifications

  RFD16N02L, RFD16N02LSM UNITS
Drain to Source Voltage (Note 1) VDSS 20 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 20 V
Continuous Drain Current ID 16 A
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS ±10 V
EAS
Power Dissipation PD
25oC		 48 W
Pulsed Avalanche Rating EAS Figures 6, 16, 17
Derate above 25oC 0.606 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Soldering Temperature of Leads for 10s TL 300 o C



Description

The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.




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